Vishay SIR4411DP Type P-Channel Single MOSFETs, -48.3 A, -40 V Enhancement, 8-Pin PowerPAK SIR4411DP-T1-GE3
- RS Stock No.:
- 653-192
- Mfr. Part No.:
- SIR4411DP-T1-GE3
- Manufacturer:
- Vishay
N
This image is representative of the product range
Subtotal (1 reel of 3000 units)*
SGD2,574.00
(exc. GST)
SGD2,805.00
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 3,000 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | SGD0.858 | SGD2,574.00 |
*price indicative
- RS Stock No.:
- 653-192
- Mfr. Part No.:
- SIR4411DP-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | -48.3A | |
| Maximum Drain Source Voltage Vds | -40V | |
| Package Type | PowerPAK | |
| Series | SIR4411DP | |
| Mount Type | PCB | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.011Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 36.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 56.8W | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.61mm | |
| Length | 5.15mm | |
| Standards/Approvals | No | |
| Width | 6.25 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id -48.3A | ||
Maximum Drain Source Voltage Vds -40V | ||
Package Type PowerPAK | ||
Series SIR4411DP | ||
Mount Type PCB | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.011Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 36.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 56.8W | ||
Maximum Operating Temperature 150°C | ||
Height 0.61mm | ||
Length 5.15mm | ||
Standards/Approvals No | ||
Width 6.25 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay TrenchFET Gen IV P-Channel Power MOSFET rated for 40 V drain-source voltage. It features low RDS(on) and fast switching performance, making it suitable for high-efficiency power management. Packaged in a Compact PowerPAK SO-8, it's Ideal for DC/DC converters, load switching, and battery management in space-constrained designs.
Pb Free
Halogen free
RoHS compliant
Related links
- Vishay SIR4411DP Type P-Channel Single MOSFETs -40 V Enhancement, 8-Pin PowerPAK
- Vishay SQS201CENW Type P-Channel Single MOSFETs 100 V Enhancement, 8-Pin PowerPAK
- Vishay SQS201CENW Type P-Channel Single MOSFETs 100 V Enhancement, 8-Pin PowerPAK SQS201CENW-T1_GE3
- Vishay SIS5712DN Type N-Channel Single MOSFETs 150 V Enhancement, 8-Pin PowerPAK
- Vishay SIRA18DDP Type N-Channel Single MOSFETs 30 V Enhancement, 8-Pin PowerPAK
- Vishay SIS4406DN Type N-Channel Single MOSFETs 40 V Enhancement, 8-Pin PowerPAK
- Vishay E Type N-Channel Single MOSFETs 600 V Enhancement, 8-Pin PowerPAK
- Vishay SIR5712DP Type N-Channel Single MOSFETs 150 V Enhancement, 8-Pin PowerPAK