Vishay SISS5208DN N-Channel Single MOSFETs, 172 A, 20 V Enhancement, 8-Pin PowerPAK SISS5208DN-T1-GE3

RS Stock No.:: 653-148
Mfr. Part No.:: SISS5208DN-T1-GE3
Manufacturer:: Vishay

Vishay SISS5208DN N-Channel Single MOSFETs, 172 A, 20 V Enhancement, 8-Pin PowerPAK SISS5208DN-T1-GE3

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Subtotal (1 reel of 3000 units)*

SGD2,925.00

(exc. GST)

SGD3,189.00

(inc. GST)

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In Stock

Plus 3,000 unit(s) shipping from 05 October 2026

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Units	Per unit	Per Reel*
3000 +	SGD0.975	SGD2,925.00

*price indicative

RS Stock No.:: 653-148
Mfr. Part No.:: SISS5208DN-T1-GE3
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	N
	Product Type	Single MOSFETs
	Maximum Continuous Drain Current Id	172A
	Maximum Drain Source Voltage Vds	20V
	Series	SISS5208DN
	Package Type	PowerPAK
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.0013Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	56.8W
	Forward Voltage Vf	1.1V
	Maximum Gate Source Voltage Vgs	8V
	Typical Gate Charge Qg @ Vgs	24.6nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	3.4mm
	Width	3.4mm
	Height	830μm
	Automotive Standard	No

	Select all
	Brand Vishay
	Channel Type N
	Product Type Single MOSFETs
	Maximum Continuous Drain Current Id 172A
	Maximum Drain Source Voltage Vds 20V
	Series SISS5208DN
	Package Type PowerPAK
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.0013Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 56.8W
	Forward Voltage Vf 1.1V
	Maximum Gate Source Voltage Vgs 8V
	Typical Gate Charge Qg @ Vgs 24.6nC
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 3.4mm
	Width 3.4mm
	Height 830μm
	Automotive Standard No

Datasheet - SISS5208DN-T1-GE3

COO (Country of Origin):: CN

Vishay SISS5208DN Series Single MOSFETs, 56.8W Maximum Power Dissipation, 20V Maximum Drain Source Voltage - SISS5208DN-T1-GE3

This single MOSFETs device is an N-channel enhancement transistor designed for high-current switching in compact surface-mount applications. It operates across a wide temperature range and is intended for situations requiring low conduction losses and rapid gate-driven switching. The package supports mounting on PCB land patterns where thermal and electrical performance are priorities.

Features and Benefits:

• Very low on-resistance 0.0013Ω reduces conduction losses
• High continuous drain current 172A supports heavy loads
• Low forward voltage 1.1V improves efficiency under load
• Gate charge 24.6nC enables controlled switching speed
• Maximum power dissipation 56.8W manages elevated thermal stress
• Gate-source withstand 8V permits robust drive margin

Applications

• Suitable for synchronous buck converter power stages
• Ideal for high-current motor driver outputs
• Used with server power distribution circuits
• Can be used for battery protection and management
• Suitable for telecom rectifier and power-supply rails

What voltage stress can it withstand between drain and source?

It is rated to tolerate up to 20V between drain and source under normal conditions.

How does the device behave in extreme temperatures?

It is specified to operate from -55°C up to 150°C, allowing it to function across typical industrial temperature ranges.

What mounting style is required for assembly?

It is supplied in a PowerPAK surface-mount package, intended for PCB solder attachment using standard reflow processes.

How many electrical connections does it provide?

The device has an eight-pin configuration to facilitate power and gate connections while optimising thermal paths.