Vishay SISS32LDN Type N-Channel Single MOSFETs, 63 A, 80 V Enhancement, 8-Pin PowerPAK
- RS Stock No.:
- 653-104
- Mfr. Part No.:
- SISS32LDN-T1-BE3
- Manufacturer:
- Vishay
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- RS Stock No.:
- 653-104
- Mfr. Part No.:
- SISS32LDN-T1-BE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 63A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | SISS32LDN | |
| Package Type | PowerPAK | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0072Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 17.7nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 65.7W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 3.3mm | |
| Length | 3.3mm | |
| Height | 0.75mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 63A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series SISS32LDN | ||
Package Type PowerPAK | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0072Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 17.7nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 65.7W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 3.3mm | ||
Length 3.3mm | ||
Height 0.75mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TH
Vishay SISS32LDN Series Single MOSFETs, 80V Maximum Drain Source Voltage, 63A Maximum Continuous Drain Current - SISS32LDN-T1-BE3
This single MOSFETs device is a high-current N-channel transistor designed for surface-mount power switching in industrial electronics. It operates as an enhancement-mode MOSFET suitable for driving and switching applications where elevated drain-source voltage and robust current handling are required. The component is supplied in a Compact PowerPAK package intended for SMD assembly and complies with RoHS requirements.
Features and Benefits:
• 80V drain-source rating enables high-voltage switching capability • 63A continuous drain current supports heavy-load conduction • Low RDS(on) 0.0072Ω minimises conduction losses under load • 65.7W power dissipation allows sustained thermal throughput • 17.7nC typical gate charge affords controlled switching energy • 150°C maximum operating temperature permits high-temperature operation
Applications
• Suitable for motor-drive half-bridge stages in automation systems • Ideal for DC-DC converters in power distribution modules • Used for load switching in industrial control equipment • Can be used for battery management and high-current distribution
What gate-voltage limits should designers observe?
The gate-to-source voltage must not exceed ±20V to prevent gate-dielectric stress.
What thermal considerations apply during PCB layout?
Given the 65.7W dissipation rating, designers should provide adequate copper area and thermal vias for heat spreading and connect to a heatsinking plane where necessary.
How does switching behaviour impact electromagnetic emissions?
The 17.7nC gate charge influences rise and fall times
controlling gate-drive slew rates and adding snubbers helps manage switching transients and EMI.
What ambient extremes can the device tolerate during operation?
It is specified for use down to -55°C and up to 150°C junction temperature for broad environmental range compatibility.
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