Vishay SI3122DV Type N-Channel Single MOSFETs, 1.95 A, 100 V Enhancement, 6-Pin PowerPAK
- RS Stock No.:
- 653-089
- Mfr. Part No.:
- SI3122DV-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
View bulk pricing optionSubtotal (1 tape of 1 unit)*
SGD0.47
(exc. GST)
SGD0.51
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- 6,000 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Tape(s) | Per Tape |
|---|---|
| 1 - 24 | SGD0.47 |
| 25 - 99 | SGD0.41 |
| 100 - 499 | SGD0.37 |
| 500 - 999 | SGD0.32 |
| 1000 + | SGD0.30 |
*price indicative
- RS Stock No.:
- 653-089
- Mfr. Part No.:
- SI3122DV-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 1.95A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerPAK | |
| Series | SI3122DV | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.160Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 2.9nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.34W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 1.95A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerPAK | ||
Series SI3122DV | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.160Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 2.9nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.34W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 3.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay N-channel MOSFET designed for high-efficiency switching in Compact power systems. It supports up to 100 V drain-source voltage. Packaged in a TSOP-6 format, it utilizes TrenchFET Gen IV technology to deliver low RDS(on), fast switching, and efficient thermal performance in space-constrained designs.
Pb Free
Halogen free
RoHS compliant
Used in LED backlighting
Related links
- Vishay SI3122DV Type N-Channel Single MOSFETs 100 V Enhancement, 6-Pin PowerPAK SI3122DV-T1-GE3
- Vishay SIS9122 Dual N-Channel Single MOSFETs 100 V Enhancement, 8-Pin PowerPAK
- Vishay SIS4406DN Type N-Channel Single MOSFETs 40 V Enhancement, 8-Pin PowerPAK
- Vishay E Type N-Channel Single MOSFETs 600 V Enhancement, 8-Pin PowerPAK
- Vishay SIS5712DN Type N-Channel Single MOSFETs 150 V Enhancement, 8-Pin PowerPAK
- Vishay SIHM080N60E Type N-Channel Single MOSFETs 600 V Enhancement, 4-Pin PowerPAK
- Vishay SIB4122DK Type N-Channel Single MOSFETs 100 V Enhancement, 7-Pin PowerPAK
- Vishay SIR5712DP Type N-Channel Single MOSFETs 150 V Enhancement, 8-Pin PowerPAK