onsemi NVM Type N-Channel Single MOSFETs, 94 A, 40 V Enhancement, 5-Pin DFNW-5 NVMFWS2D9N04XMT1G
- RS Stock No.:
- 648-509
- Mfr. Part No.:
- NVMFWS2D9N04XMT1G
- Manufacturer:
- onsemi
N
This image is representative of the product range
Bulk discount available
Subtotal (1 tape of 10 units)*
SGD16.58
(exc. GST)
SGD18.07
(inc. GST)
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In Stock
- 290 unit(s) ready to ship from another location
- Plus 1,500 unit(s) shipping from 29 April 2026
- Plus 1,500 unit(s) shipping from 03 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 90 | SGD1.658 | SGD16.58 |
| 100 - 490 | SGD1.027 | SGD10.27 |
| 500 - 990 | SGD0.595 | SGD5.95 |
| 1000 + | SGD0.58 | SGD5.80 |
*price indicative
- RS Stock No.:
- 648-509
- Mfr. Part No.:
- NVMFWS2D9N04XMT1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 94A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | DFNW-5 | |
| Series | NVM | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 3.1mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 50W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 15.7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.90 mm | |
| Height | 1mm | |
| Length | 4.9mm | |
| Standards/Approvals | Pb-Free, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 94A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type DFNW-5 | ||
Series NVM | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 3.1mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 50W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 15.7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 175°C | ||
Width 5.90 mm | ||
Height 1mm | ||
Length 4.9mm | ||
Standards/Approvals Pb-Free, RoHS | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MY
The ON Semiconductor Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
Small Footprint
Low RDS(on)
Low QG and Capacitance
Wettable Flank Option
RoHS Compliant
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