onsemi NVH Type N-Channel MOSFET, 50 A, 650 V N, 4-Pin TO-247-4L NVH4L023N065M3S
- RS Stock No.:
- 327-806
- Mfr. Part No.:
- NVH4L023N065M3S
- Manufacturer:
- onsemi
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SGD25.69
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SGD28.00
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In Stock
- 450 unit(s) ready to ship from another location
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Units | Per unit |
|---|---|
| 1 - 9 | SGD25.69 |
| 10 - 99 | SGD23.11 |
| 100 + | SGD21.31 |
*price indicative
- RS Stock No.:
- 327-806
- Mfr. Part No.:
- NVH4L023N065M3S
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247-4L | |
| Series | NVH | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 44mΩ | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | ±22 V | |
| Typical Gate Charge Qg @ Vgs | 55nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 4.5V | |
| Maximum Power Dissipation Pd | 187W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | Halide Free and RoHS with Exemption 7a, Pb-Free 2LI | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247-4L | ||
Series NVH | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 44mΩ | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs ±22 V | ||
Typical Gate Charge Qg @ Vgs 55nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 4.5V | ||
Maximum Power Dissipation Pd 187W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals Halide Free and RoHS with Exemption 7a, Pb-Free 2LI | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The ON Semiconductor Silicon Carbide (SiC) MOSFET, EliteSiC, is a 650 V, 23 mΩ device in the M3S TO-247-4L package. It is designed for high-efficiency, high-performance power conversion, providing low on-resistance and fast switching. Ideal for applications in automotive, industrial, and renewable energy systems, this MOSFET ensures reliable operation under demanding conditions.
Devices are Pb Free and are RoHS Compliant
Qualified for Automotive According to AEC Q101
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