onsemi NVH Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 4-Pin TO-247
- RS Stock No.:
- 202-5737
- Mfr. Part No.:
- NVH4L040N120SC1
- Manufacturer:
- onsemi
This image is representative of the product range
Subtotal (1 tube of 450 units)*
SGD12,706.65
(exc. GST)
SGD13,850.10
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 05 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 450 + | SGD28.237 | SGD12,706.65 |
*price indicative
- RS Stock No.:
- 202-5737
- Mfr. Part No.:
- NVH4L040N120SC1
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247 | |
| Series | NVH | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 56mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -50°C | |
| Typical Gate Charge Qg @ Vgs | 106nC | |
| Maximum Power Dissipation Pd | 319W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Operating Temperature | 170°C | |
| Length | 15.8mm | |
| Height | 22.74mm | |
| Standards/Approvals | No | |
| Width | 5.2 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247 | ||
Series NVH | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 56mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -50°C | ||
Typical Gate Charge Qg @ Vgs 106nC | ||
Maximum Power Dissipation Pd 319W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Operating Temperature 170°C | ||
Length 15.8mm | ||
Height 22.74mm | ||
Standards/Approvals No | ||
Width 5.2 mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 40 mohm, 1200 V, M1, TO247−4L Silicon Carbide MOSFET, N-Channel, 1200 V, 40 mΩ, TO247-4L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 58 Ampere and 1200 Volts. It can be used in Automotive on board charger, DC or DC Converter applications.
AEC Q101 qualified
Production part approval process Capable
100% avalanche tested
Low effective output capacitance
Related links
- onsemi NVH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247 NVH4L040N120SC1
- onsemi NVH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247
- onsemi NVH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247
- onsemi NVH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247
- onsemi NVH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247
- onsemi NVH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247 NVHL160N120SC1
- onsemi NVH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247 NVH4L080N120SC1
- onsemi NVH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247 NVH4L020N120SC1
