onsemi NTB Type N-Channel MOSFET, 70 A, 650 V Enhancement, 7-Pin TO-263 NTBG023N065M3S
- RS Stock No.:
- 277-040P
- Mfr. Part No.:
- NTBG023N065M3S
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal 10 units (supplied on a continuous strip)*
SGD115.50
(exc. GST)
SGD125.90
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 800 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 10 - 99 | SGD11.55 |
| 100 - 499 | SGD10.64 |
| 500 - 999 | SGD9.88 |
| 1000 + | SGD8.02 |
*price indicative
- RS Stock No.:
- 277-040P
- Mfr. Part No.:
- NTBG023N065M3S
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 70A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-263 | |
| Series | NTB | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 23mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 69nC | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 263W | |
| Forward Voltage Vf | 6V | |
| Maximum Operating Temperature | 175°C | |
| Height | 15.4mm | |
| Width | 9.9 mm | |
| Standards/Approvals | RoHS with exemption 7a, Pb-Free 2LI (on Second Level Interconnection) | |
| Length | 9.2mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 70A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-263 | ||
Series NTB | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 23mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 69nC | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 263W | ||
Forward Voltage Vf 6V | ||
Maximum Operating Temperature 175°C | ||
Height 15.4mm | ||
Width 9.9 mm | ||
Standards/Approvals RoHS with exemption 7a, Pb-Free 2LI (on Second Level Interconnection) | ||
Length 9.2mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The ON Semiconductor SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.
Ultra low gate charge
High speed switching with low capacitance
100% avalanche tested
Device is Halide Free and RoHS compliant
Related links
- onsemi NTB Type N-Channel MOSFET 650 V Enhancement, 7-Pin TO-263 NTBG023N065M3S
- onsemi NTB Type N-Channel MOSFET 1200 V Enhancement, 7-Pin TO-263
- onsemi NTB Type N-Channel MOSFET & Diode 1200 V Enhancement, 7-Pin TO-263
- onsemi NTB Type N-Channel MOSFET 1200 V Enhancement, 7-Pin TO-263
- onsemi NTB Type N-Channel MOSFET 150 V Enhancement, 7-Pin TO-263
- onsemi NTB Type N-Channel MOSFET 150 V Enhancement, 7-Pin TO-263
- onsemi NTB Type N-Channel MOSFET 1200 V Enhancement, 7-Pin TO-263
- onsemi NTB Type N-Channel MOSFET 1200 V Enhancement, 7-Pin TO-263 NTBG022N120M3S