ROHM R60 Type N-Channel MOSFET, 600 V Enhancement, 3-Pin SOT-223-3 R6003JND4TL1
- RS Stock No.:
- 264-849
- Mfr. Part No.:
- R6003JND4TL1
- Manufacturer:
- ROHM
This image is representative of the product range
Bulk discount available
Subtotal (1 tape of 10 units)*
SGD6.60
(exc. GST)
SGD7.20
(inc. GST)
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In Stock
- Plus 60 unit(s) shipping from 29 December 2025
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Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 90 | SGD0.66 | SGD6.60 |
| 100 - 240 | SGD0.626 | SGD6.26 |
| 250 - 490 | SGD0.58 | SGD5.80 |
| 500 - 990 | SGD0.534 | SGD5.34 |
| 1000 + | SGD0.515 | SGD5.15 |
*price indicative
- RS Stock No.:
- 264-849
- Mfr. Part No.:
- R6003JND4TL1
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | SOT-223-3 | |
| Series | R60 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.15Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 7.8W | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Typical Gate Charge Qg @ Vgs | 8nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type SOT-223-3 | ||
Series R60 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.15Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 7.8W | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Typical Gate Charge Qg @ Vgs 8nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ROHM 600V 1.3A SOT 223 3 Presto MOS with integrated high-speed diode is a power MOSFET with fast reverse recovery time, suitable for the switching applications. Which increases design flexibility while maintaining the industrys fastest reverse recovery time optimized for EV charging stations and motor drive in home appliances such as refrigerators and Air Conditioners.
Fast reverse recovery time
Low on-resistance
Fast switching speed
Drive circuits can be simple
Pb-free plating and RoHS compliant
Related links
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