ROHM RQ3 Type N-Channel MOSFET, 60 V Enhancement, 8-Pin HSMT-8 RQ3L060BGTB1

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Subtotal (1 tape of 10 units)*

SGD7.64

(exc. GST)

SGD8.33

(inc. GST)

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Units
Per unit
Per Tape*
10 - 90SGD0.764SGD7.64
100 - 240SGD0.725SGD7.25
250 - 490SGD0.673SGD6.73
500 - 990SGD0.619SGD6.19
1000 +SGD0.595SGD5.95

*price indicative

Packaging Options:
RS Stock No.:
264-578
Mfr. Part No.:
RQ3L060BGTB1
Manufacturer:
ROHM
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Brand

ROHM

Product Type

MOSFET

Channel Type

Type N

Maximum Drain Source Voltage Vds

60V

Series

RQ3

Package Type

HSMT-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

38mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

14W

Typical Gate Charge Qg @ Vgs

5.5nC

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The ROHM N-channel 60V 15.5A power MOSFET in an HSMT8 package features low on-resistance and a high-power design, making it ideal for switching, motor drives, and DC or DC converter applications.

Low on-resistance

High Power small mold Package HSMT8

Pb-free plating and RoHS compliant

Halogen Free

100% Rg and UIS tested

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