ROHM QH8 2 Type N-Channel MOSFET, 100 V Enhancement, 8-Pin TSMT-8 QH8KE5TCR
- RS Stock No.:
- 264-562
- Mfr. Part No.:
- QH8KE5TCR
- Manufacturer:
- ROHM
This image is representative of the product range
Bulk discount available
Subtotal (1 tape of 25 units)*
SGD12.675
(exc. GST)
SGD13.825
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 3,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 25 - 75 | SGD0.507 | SGD12.68 |
| 100 - 225 | SGD0.482 | SGD12.05 |
| 250 - 475 | SGD0.446 | SGD11.15 |
| 500 - 975 | SGD0.411 | SGD10.28 |
| 1000 + | SGD0.396 | SGD9.90 |
*price indicative
- RS Stock No.:
- 264-562
- Mfr. Part No.:
- QH8KE5TCR
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TSMT-8 | |
| Series | QH8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 202mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 2.8nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 1.5W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TSMT-8 | ||
Series QH8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 202mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 2.8nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 1.5W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The ROHM 100V 2.0A dual N-channel power MOSFET in a TSMT8 package is designed for high-efficiency switching power supply and motor drive applications.
Low on-resistance
Small Surface Mount Package TSMT8
Pb-free plating and RoHS compliant
Halogen Free
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