ROHM RQ1 Type P-Channel MOSFET, 5 A, 30 V Enhancement, 8-Pin TSMT-8 RQ1E050RPHZGTR
- RS Stock No.:
- 264-430
- Mfr. Part No.:
- RQ1E050RPHZGTR
- Manufacturer:
- ROHM
This image is representative of the product range
Bulk discount available
Subtotal (1 tape of 25 units)*
SGD14.375
(exc. GST)
SGD15.675
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 3,000 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 25 - 75 | SGD0.575 | SGD14.38 |
| 100 - 225 | SGD0.546 | SGD13.65 |
| 250 - 475 | SGD0.506 | SGD12.65 |
| 500 - 975 | SGD0.466 | SGD11.65 |
| 1000 + | SGD0.448 | SGD11.20 |
*price indicative
- RS Stock No.:
- 264-430
- Mfr. Part No.:
- RQ1E050RPHZGTR
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TSMT-8 | |
| Series | RQ1 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 31mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.5W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TSMT-8 | ||
Series RQ1 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 31mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.5W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The ROHM Small Signal MOSFET for switching applications and it is a high-reliability product of automotive grade qualified to AEC-Q101.
Low on-resistance
Built-in G-S protection diode
Small surface mount package TSMT8
Pb-free lead plating and RoHS compliant
Related links
- ROHM RQ1 Type P-Channel MOSFET 12 V Enhancement, 8-Pin TSMT-8 RQ1A070ZPHZGTR
- ROHM RQ1 Type P-Channel MOSFET 30 V Enhancement, 8-Pin TSMT-8 RQ1E070RPHZGTR
- ROHM QH8MB5 Type P 5 A 8-Pin TSMT-8 QH8MB5TCR
- ROHM QH8MC5 Type N 3.5 A 8-Pin TSMT-8 QH8MC5TCR
- ROHM QS8 2 Type N 100 V Enhancement, 8-Pin TSMT-8 QS8M51HZGTR
- ROHM Type P-Channel MOSFET 40 V, 6-Pin TSMT-8 RQ6G050ATTCR
- ROHM P-Channel MOSFET 60 V, 8-Pin TSMT-8 RQ7L050ATTCR
- ROHM Dual P-Channel MOSFET 40 V, 8-Pin TSMT-8 QH8JB5TCR