Nexperia PSM Type N-Channel MOSFET, 120 A, 30 V Enhancement, 5-Pin TO-263 PSMN1R5-30BLEJ
- RS Stock No.:
- 219-445
- Mfr. Part No.:
- PSMN1R5-30BLEJ
- Manufacturer:
- Nexperia
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SGD5.56
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SGD6.06
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Tape(s) | Per Tape |
|---|---|
| 1 - 9 | SGD5.56 |
| 10 - 99 | SGD5.00 |
| 100 + | SGD4.61 |
*price indicative
- RS Stock No.:
- 219-445
- Mfr. Part No.:
- PSMN1R5-30BLEJ
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | PSM | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1.5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 228nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 401W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series PSM | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1.5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 228nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 401W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The Nexperia Logic Level N-channel MOSFET is housed in a D2PAK package and qualified for operation up to 175°C. It is designed for use in a broad range of industrial, communications, and domestic applications, offering reliable performance in demanding environments.
Enhanced forward biased safe operating area for superior linear mode operation
Very low Rdson for low conduction losses
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