IXYS Type N-Channel MOSFET, 110 A, 100 V Enhancement, 3-Pin TO-247 IXFH110N10P
- RS Stock No.:
- 193-492
- Distrelec Article No.:
- 302-53-306
- Mfr. Part No.:
- IXFH110N10P
- Manufacturer:
- IXYS
This image is representative of the product range
Bulk discount available
Subtotal (1 unit)*
SGD11.41
(exc. GST)
SGD12.44
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 1,035 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | SGD11.41 |
| 10 - 49 | SGD11.02 |
| 50 - 99 | SGD10.15 |
| 100 - 249 | SGD9.76 |
| 250 + | SGD9.12 |
*price indicative
- RS Stock No.:
- 193-492
- Distrelec Article No.:
- 302-53-306
- Mfr. Part No.:
- IXFH110N10P
- Manufacturer:
- IXYS
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 110A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 15mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 110nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 480W | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.3 mm | |
| Standards/Approvals | No | |
| Length | 16.26mm | |
| Height | 21.46mm | |
| Automotive Standard | No | |
| Distrelec Product Id | 30253306 | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 110A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 15mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 110nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 480W | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 175°C | ||
Width 5.3 mm | ||
Standards/Approvals No | ||
Length 16.26mm | ||
Height 21.46mm | ||
Automotive Standard No | ||
Distrelec Product Id 30253306 | ||
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
Related links
- IXYS Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-247
- IXYS Type N-Channel MOSFET 600 V Enhancement, 3-Pin PLUS264
- IXYS Type N-Channel MOSFET 600 V Enhancement, 3-Pin PLUS264 IXFB110N60P3
- IXYS Trench Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-247 IXTH110N25T
- IXYS Trench Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-247
- STMicroelectronics Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- STMicroelectronics Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 STP240N10F7
- STMicroelectronics Type N-Channel MOSFET 100 V Enhancement, 3-Pin H2PAK STH150N10F7-2