DiodesZetex Type P-Channel MOSFET, 1.1 A, 30 V Enhancement, 3-Pin SOT-23 ZXM61P03FTA
- RS Stock No.:
- 155-232
- Mfr. Part No.:
- ZXM61P03FTA
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
SGD12.375
(exc. GST)
SGD13.50
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 25 unit(s) ready to ship from another location
- Plus 24,150 unit(s) shipping from 21 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 125 | SGD0.495 | SGD12.38 |
| 150 - 725 | SGD0.48 | SGD12.00 |
| 750 - 1475 | SGD0.466 | SGD11.65 |
| 1500 + | SGD0.452 | SGD11.30 |
*price indicative
- RS Stock No.:
- 155-232
- Mfr. Part No.:
- ZXM61P03FTA
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 1.1A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 550mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -0.95V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 806mW | |
| Typical Gate Charge Qg @ Vgs | 4.8nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Width | 1.4 mm | |
| Length | 3.05mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 1.1A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 550mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -0.95V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 806mW | ||
Typical Gate Charge Qg @ Vgs 4.8nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1mm | ||
Width 1.4 mm | ||
Length 3.05mm | ||
Automotive Standard AEC-Q101 | ||
P-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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