DiodesZetex Type N-Channel MOSFET, 500 mA, 100 V Enhancement, 4-Pin SOT-223 ZVN2110GTA
- RS Stock No.:
- 155-135
- Mfr. Part No.:
- ZVN2110GTA
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
SGD10.55
(exc. GST)
SGD11.50
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 10 unit(s) shipping from 29 December 2025
- Plus 2,660 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | SGD1.055 | SGD10.55 |
| 20 - 40 | SGD1.034 | SGD10.34 |
| 50 - 90 | SGD1.013 | SGD10.13 |
| 100 - 490 | SGD0.992 | SGD9.92 |
| 500 + | SGD0.817 | SGD8.17 |
*price indicative
- RS Stock No.:
- 155-135
- Mfr. Part No.:
- ZVN2110GTA
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 500mA | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 4Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2W | |
| Forward Voltage Vf | -4V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.7 mm | |
| Length | 6.7mm | |
| Height | 1.65mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q200, AEC-Q101, AEC-Q100 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 500mA | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 4Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2W | ||
Forward Voltage Vf -4V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 3.7 mm | ||
Length 6.7mm | ||
Height 1.65mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q200, AEC-Q101, AEC-Q100 | ||
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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