STMicroelectronics STripFET II Type N-Channel MOSFET, 12 A, 60 V Enhancement, 3-Pin TO-252 STD12NF06T4
- RS Stock No.:
- 151-938
- Mfr. Part No.:
- STD12NF06T4
- Manufacturer:
- STMicroelectronics
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SGD13.34
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SGD14.54
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Units | Per unit | Per Tape* |
|---|---|---|
| 20 - 180 | SGD0.667 | SGD13.34 |
| 200 - 480 | SGD0.634 | SGD12.68 |
| 500 - 980 | SGD0.586 | SGD11.72 |
| 1000 - 1980 | SGD0.54 | SGD10.80 |
| 2000 + | SGD0.521 | SGD10.42 |
*price indicative
- RS Stock No.:
- 151-938
- Mfr. Part No.:
- STD12NF06T4
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Series | STripFET II | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.1Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 30W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Series STripFET II | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.1Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 30W | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET series has been developed using STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in Advanced high efficiency isolated DC to DC converters for telecom and computer applications.
Exceptional dv/dt capability
100% avalanche tested
Low gate charge
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