STMicroelectronics MDmesh M9 Type N-Channel MOSFET, 54 A, 650 V Enhancement, 3-Pin TO-247

This image is representative of the product range

View all MOSFETs

Subtotal (1 unit)*

SGD19.00

(exc. GST)

SGD20.71

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • Plus 30 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 +SGD19.00

*price indicative

RS Stock No.:
151-783
Mfr. Part No.:
STWA65N045M9
Manufacturer:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

54A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-247

Series

MDmesh M9

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

45mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

8nC

Maximum Gate Source Voltage Vgs

±30 V

Forward Voltage Vf

1.5V

Maximum Power Dissipation Pd

312W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

15.90 mm

Length

20.10mm

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics N-channel Power MOSFET, I t is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on-resistance and reduced gate charge values, among all silicon based fast switching super-junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency

Higher VDSS rating

Higher dv/dt capability

Excellent switching performance

Easy to drive

Related links