STMicroelectronics SuperMESH Dual N-Channel MOSFET, 0.4 A, 450 V Enhancement, 8-Pin SO-8 STS1DNC45

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SGD8.27

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SGD9.01

(inc. GST)

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10 - 90SGD0.827SGD8.27
100 - 240SGD0.785SGD7.85
250 - 490SGD0.728SGD7.28
500 - 990SGD0.669SGD6.69
1000 +SGD0.644SGD6.44

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Packaging Options:
RS Stock No.:
151-447
Mfr. Part No.:
STS1DNC45
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Dual N

Maximum Continuous Drain Current Id

0.4A

Maximum Drain Source Voltage Vds

450V

Package Type

SO-8

Series

SuperMESH

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

4.5Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-65°C

Maximum Power Dissipation Pd

2W

Forward Voltage Vf

1.6V

Maximum Gate Source Voltage Vgs

30 V

Typical Gate Charge Qg @ Vgs

10nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET developed using Super MESH technology, achieved through optimization of well established Power MESH layout. In addition to a significant reduction in on resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

Standard outline for easy automated surface mount assembly

Gate charge minimized

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