STMicroelectronics SuperMESH Dual N-Channel MOSFET, 400 mA, 450 V Enhancement, 8-Pin SO-8 STS1DNC45
- RS Stock No.:
- 151-447
- Mfr. Part No.:
- STS1DNC45
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 151-447
- Mfr. Part No.:
- STS1DNC45
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Dual N | |
| Maximum Continuous Drain Current Id | 400mA | |
| Maximum Drain Source Voltage Vds | 450V | |
| Package Type | SO-8 | |
| Series | SuperMESH | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.5Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.6V | |
| Minimum Operating Temperature | -65°C | |
| Maximum Power Dissipation Pd | 2W | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Dual N | ||
Maximum Continuous Drain Current Id 400mA | ||
Maximum Drain Source Voltage Vds 450V | ||
Package Type SO-8 | ||
Series SuperMESH | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.5Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.6V | ||
Minimum Operating Temperature -65°C | ||
Maximum Power Dissipation Pd 2W | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET developed using Super MESH technology, achieved through optimization of well established Power MESH layout. In addition to a significant reduction in on resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
Standard outline for easy automated surface mount assembly
Gate charge minimized
Related links
- STMicroelectronics SuperMESH Dual N-Channel MOSFET 450 V Enhancement, 8-Pin SO-8 STS1DNC45
- Infineon Dual N Channel Logic Level Enhancement Mode OptiMOSTM-T2 Dual N-Channel MOSFET 60 V Enhancement, 8-Pin
- Microchip Dual N Channel TD9944 1 Dual N-Channel MOSFET Arrays 240 V Enhancement, 8-Pin SOIC TD9944TG-G
- Infineon Dual N Channel Mosfet HEXFET 2 N-Channel MOSFET 55 V Enhancement, 8-Pin SO-8 IRF7341GTRPBF
- Infineon Dual N Channel Normal Level IPG 2 N-Channel MOSFET 40 V Enhancement, 8-Pin SuperSO
- ROHM SH8KC5 Dual N-Channel MOSFET 60 V Enhancement, 8-Pin SOP-8 SH8KC5TB1
- Infineon ISA Dual N-Channel MOSFET 40 V Enhancement, 8-Pin PG-DSO-8 ISA170170N04LMDSXTMA1
- Infineon OptiMOS-TM5 Dual N-Channel MOSFET 100 V Enhancement, 8-Pin PG-TDSON-8-60 IAUCN10S5L094DATMA1