STMicroelectronics SuperMESH N-Channel MOSFET, 2.4 A, 600 V Enhancement, 3-Pin TO-252 STD3NK60ZT4

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Subtotal (1 tape of 20 units)*

SGD22.16

(exc. GST)

SGD24.16

(inc. GST)

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Units
Per unit
Per Tape*
20 - 180SGD1.108SGD22.16
200 - 480SGD1.052SGD21.04
500 - 980SGD0.975SGD19.50
1000 - 1980SGD0.899SGD17.98
2000 +SGD0.864SGD17.28

*price indicative

Packaging Options:
RS Stock No.:
151-418
Mfr. Part No.:
STD3NK60ZT4
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

2.4A

Maximum Drain Source Voltage Vds

600V

Series

SuperMESH

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.6Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

11.8nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.6V

Maximum Gate Source Voltage Vgs

30V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Width

6.6mm

Length

10.1mm

Height

2.4mm

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET developed using the Super MESH technology, an optimization of the well established Power MESH. In addition to a significant reduction in on resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.

100% avalanche tested

Gate charge minimized

Very low intrinsic capacitance

Zener protected

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