onsemi MMBF4391LT1G, Single Type N-Channel JFET-Channel JFET, 30 V 50 to 150 mA, 3-Pin SOT-23
- RS Stock No.:
- 625-5723
- Mfr. Part No.:
- MMBF4391LT1G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
View bulk pricing optionSubtotal (1 pack of 5 units)*
SGD1.68
(exc. GST)
SGD1.83
(inc. GST)
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | SGD0.336 | SGD1.68 |
| 25 - 95 | SGD0.312 | SGD1.56 |
| 100 - 245 | SGD0.29 | SGD1.45 |
| 250 - 495 | SGD0.278 | SGD1.39 |
| 500 + | SGD0.266 | SGD1.33 |
*price indicative
- RS Stock No.:
- 625-5723
- Mfr. Part No.:
- MMBF4391LT1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | JFET | |
| Sub Type | JFET | |
| Channel Type | Type N | |
| Maximum Drain Source Voltage Vds | 30V | |
| Configuration | Single | |
| Mount Type | Surface | |
| Package Type | SOT-23 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 225mW | |
| Drain Source Current Ids | 50 to 150 mA | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 30Ω | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 0.94mm | |
| Length | 2.9mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type JFET | ||
Sub Type JFET | ||
Channel Type Type N | ||
Maximum Drain Source Voltage Vds 30V | ||
Configuration Single | ||
Mount Type Surface | ||
Package Type SOT-23 | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 225mW | ||
Drain Source Current Ids 50 to 150 mA | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 30Ω | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 0.94mm | ||
Length 2.9mm | ||
Automotive Standard No | ||
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Related links
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