onsemi ISL9V2040D3ST, Type N-Channel IGBT, 10 A 430 V, 3-Pin TO-252, Surface

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Subtotal (1 pack of 5 units)*

SGD12.64

(exc. GST)

SGD13.78

(inc. GST)

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Being discontinued
  • Final 2,145 unit(s), ready to ship from another location
Units
Per unit
Per Pack*
5 - 20SGD2.528SGD12.64
25 - 95SGD2.44SGD12.20
100 - 245SGD2.32SGD11.60
250 - 495SGD2.20SGD11.00
500 +SGD2.092SGD10.46

*price indicative

Packaging Options:
RS Stock No.:
862-9347
Mfr. Part No.:
ISL9V2040D3ST
Manufacturer:
onsemi
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Brand

onsemi

Product Type

IGBT

Maximum Continuous Collector Current Ic

10A

Maximum Collector Emitter Voltage Vceo

430V

Maximum Power Dissipation Pd

130W

Package Type

TO-252

Mount Type

Surface

Channel Type

Type N

Pin Count

3

Maximum Collector Emitter Saturation Voltage VceSAT

1.9V

Maximum Gate Emitter Voltage VGEO

±10 V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Series

EcoSPARK

Energy Rating

200mJ

Automotive Standard

No

Discrete IGBTs, Fairchild Semiconductor


IGBT Discretes & Modules, Fairchild Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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