onsemi ISL9V3040D3ST, Type N-Channel Ignition IGBT, 21 A 430 V, 3-Pin TO-252, Surface

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Subtotal (1 pack of 5 units)*

SGD16.10

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SGD17.55

(inc. GST)

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  • 15 unit(s) ready to ship from another location
  • Plus 1,735 unit(s) shipping from 25 February 2026
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Per unit
Per Pack*
5 - 20SGD3.22SGD16.10
25 - 95SGD3.06SGD15.30
100 - 245SGD2.988SGD14.94
250 - 495SGD2.742SGD13.71
500 +SGD2.54SGD12.70

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Packaging Options:
RS Stock No.:
807-8758
Mfr. Part No.:
ISL9V3040D3ST
Manufacturer:
onsemi
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Brand

onsemi

Product Type

Ignition IGBT

Maximum Continuous Collector Current Ic

21A

Maximum Collector Emitter Voltage Vceo

430V

Maximum Power Dissipation Pd

150W

Package Type

TO-252

Mount Type

Surface

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

2.2V

Maximum Gate Emitter Voltage VGEO

±10 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Series

EcoSPARK

Automotive Standard

AEC-Q101

Energy Rating

300mJ

Discrete IGBTs, Fairchild Semiconductor


IGBT Discretes & Modules, Fairchild Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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