onsemi ISL9V3040D3ST IGBT, 21 A 300 V, 3-Pin DPAK (TO-252), Surface Mount
- RS Stock No.:
- 807-8758
- Mfr. Part No.:
- ISL9V3040D3ST
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD16.10
(exc. GST)
SGD17.55
(inc. GST)
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In Stock
- 45 unit(s) ready to ship from another location
- Plus 1,735 unit(s) shipping from 07 January 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | SGD3.22 | SGD16.10 |
| 25 - 95 | SGD3.06 | SGD15.30 |
| 100 - 245 | SGD2.988 | SGD14.94 |
| 250 - 495 | SGD2.742 | SGD13.71 |
| 500 + | SGD2.54 | SGD12.70 |
*price indicative
- RS Stock No.:
- 807-8758
- Mfr. Part No.:
- ISL9V3040D3ST
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Maximum Continuous Collector Current | 21 A | |
| Maximum Collector Emitter Voltage | 300 V | |
| Maximum Gate Emitter Voltage | ±10V | |
| Maximum Power Dissipation | 150 W | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Transistor Configuration | Single | |
| Dimensions | 6.73 x 6.22 x 2.39mm | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -40 °C | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Maximum Continuous Collector Current 21 A | ||
Maximum Collector Emitter Voltage 300 V | ||
Maximum Gate Emitter Voltage ±10V | ||
Maximum Power Dissipation 150 W | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Transistor Configuration Single | ||
Dimensions 6.73 x 6.22 x 2.39mm | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -40 °C | ||
Discrete IGBTs, Fairchild Semiconductor
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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