Toshiba GT40WR21,Q(O, Type N-Channel IGBT, 40 A 1800 V, 3-Pin TO-3PN, Through Hole
- RS Stock No.:
- 799-4864
- Mfr. Part No.:
- GT40WR21,Q(O
- Manufacturer:
- Toshiba
Bulk discount available
Subtotal (1 unit)*
SGD6.52
(exc. GST)
SGD7.11
(inc. GST)
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In Stock
- Plus 182 unit(s) shipping from 16 February 2026
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Units | Per unit |
|---|---|
| 1 - 19 | SGD6.52 |
| 20 - 49 | SGD6.38 |
| 50 - 99 | SGD6.19 |
| 100 - 249 | SGD6.04 |
| 250 + | SGD5.91 |
*price indicative
- RS Stock No.:
- 799-4864
- Mfr. Part No.:
- GT40WR21,Q(O
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Maximum Continuous Collector Current Ic | 40A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1800V | |
| Maximum Power Dissipation Pd | 375W | |
| Package Type | TO-3PN | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | ±25 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 5.9V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Maximum Continuous Collector Current Ic 40A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1800V | ||
Maximum Power Dissipation Pd 375W | ||
Package Type TO-3PN | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO ±25 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 5.9V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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