onsemi FGA40N65SMD, Type N-Channel IGBT, 40 A 650 V, 3-Pin TO-3PN, Through Hole
- RS Stock No.:
- 864-8782
- Mfr. Part No.:
- FGA40N65SMD
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
SGD12.50
(exc. GST)
SGD13.62
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Limited stock
- 20 left, ready to ship from another location
- Plus 6 left, shipping from 25 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | SGD6.25 | SGD12.50 |
| 10 - 38 | SGD6.115 | SGD12.23 |
| 40 - 98 | SGD5.935 | SGD11.87 |
| 100 - 198 | SGD5.76 | SGD11.52 |
| 200 + | SGD5.585 | SGD11.17 |
*price indicative
- RS Stock No.:
- 864-8782
- Mfr. Part No.:
- FGA40N65SMD
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Maximum Continuous Collector Current Ic | 40A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 349W | |
| Package Type | TO-3PN | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.5V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Series | Field Stop | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Maximum Continuous Collector Current Ic 40A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 349W | ||
Package Type TO-3PN | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.5V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Series Field Stop | ||
Automotive Standard No | ||
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Related links
- onsemi FGA40N65SMD IGBT 3-Pin TO-3PN, Through Hole
- onsemi FGA60N65SMD IGBT 3-Pin TO-3PN, Through Hole
- Toshiba GT40WR21 40 A 1800 V Through Hole
- STMicroelectronics STGWT20H65FB IGBT 3-Pin TO, Through Hole
- ROHM RGW40TS65DGC13 Single IGBT 3-Pin TO-247GE, Through Hole
- Infineon IGW40N65F5FKSA1 IGBT 3-Pin TO-247, Through Hole
- Infineon IHW40N65R5XKSA1 IGBT 3-Pin TO-247, Through Hole
- STMicroelectronics STGWA40IH65DF IGBT 3-Pin TO-247