onsemi FGA40N65SMD, Type N-Channel IGBT, 40 A 650 V, 3-Pin TO-3PN, Through Hole

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Subtotal (1 pack of 2 units)*

SGD12.50

(exc. GST)

SGD13.62

(inc. GST)

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Orders below SGD150.00 (exc. GST) cost SGD25.00.
Limited stock
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  • Plus 6 left, shipping from 25 February 2026
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Units
Per unit
Per Pack*
2 - 8SGD6.25SGD12.50
10 - 38SGD6.115SGD12.23
40 - 98SGD5.935SGD11.87
100 - 198SGD5.76SGD11.52
200 +SGD5.585SGD11.17

*price indicative

Packaging Options:
RS Stock No.:
864-8782
Mfr. Part No.:
FGA40N65SMD
Manufacturer:
onsemi
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Brand

onsemi

Maximum Continuous Collector Current Ic

40A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

349W

Package Type

TO-3PN

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

2.5V

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Series

Field Stop

Automotive Standard

No

Discrete IGBTs, Fairchild Semiconductor


IGBT Discretes & Modules, Fairchild Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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