Toshiba GT40QR21(STA1,E,D, Type N-Channel IGBT, 40 A 1200 V, 3-Pin SC-65, Through Hole

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1 - 9SGD6.70
10 - 49SGD6.56
50 - 99SGD6.37
100 - 249SGD6.20
250 +SGD6.06

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RS Stock No.:
756-0540
Mfr. Part No.:
GT40QR21(STA1,E,D
Manufacturer:
Toshiba
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Brand

Toshiba

Maximum Continuous Collector Current Ic

40A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

230W

Package Type

SC-65

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

0.2μs

Maximum Collector Emitter Saturation Voltage VceSAT

2.7V

Maximum Gate Emitter Voltage VGEO

±25 V

Minimum Operating Temperature

175°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
JP

IGBT Discretes, Toshiba


IGBT Discretes & Modules, Toshiba


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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