STMicroelectronics STGW40H60DLFB IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole

This image is representative of the product range

View all IGBTs
Bulk discount available

Subtotal (1 pack of 2 units)*

SGD13.83

(exc. GST)

SGD15.074

(inc. GST)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 12 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
2 - 8SGD6.915SGD13.83
10 - 18SGD6.77SGD13.54
20 - 48SGD6.635SGD13.27
50 - 98SGD6.50SGD13.00
100 +SGD6.365SGD12.73

*price indicative

Packaging Options:
RS Stock No.:
792-5791
Mfr. Part No.:
STGW40H60DLFB
Manufacturer:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

283 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.75 x 5.15 x 20.15mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

IGBT Discretes, STMicroelectronics


For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.



IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Related links