STMicroelectronics, Type N-Channel IGBT, 40 A 600 V, 3-Pin TO-220, Through Hole

This image is representative of the product range

View all IGBTs
Bulk discount available

Subtotal (1 tube of 50 units)*

SGD104.75

(exc. GST)

SGD114.20

(inc. GST)

Add to Basket
Select or type quantity
Orders below SGD150.00 (exc. GST) cost SGD25.00.
Temporarily out of stock
  • Shipping from 22 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tube*
50 - 100SGD2.095SGD104.75
150 - 200SGD2.017SGD100.85
250 +SGD1.891SGD94.55

*price indicative

RS Stock No.:
168-7066
Mfr. Part No.:
STGF20H60DF
Manufacturer:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Product Type

IGBT

Maximum Continuous Collector Current Ic

40A

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

167W

Package Type

TO-220

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Maximum Operating Temperature

175°C

Width

4.6 mm

Length

10.4mm

Standards/Approvals

No

Series

Trench Gate Field Stop

Height

16.4mm

Automotive Standard

No

COO (Country of Origin):
CN

IGBT Discretes, STMicroelectronics


IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Related links