STMicroelectronics STGF20H60DF, Type N-Channel IGBT, 40 A 600 V, 3-Pin TO-220, Through Hole

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Subtotal (1 pack of 5 units)*

SGD20.81

(exc. GST)

SGD22.685

(inc. GST)

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5 - 10SGD4.162SGD20.81
15 +SGD3.954SGD19.77

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Packaging Options:
RS Stock No.:
791-9349
Mfr. Part No.:
STGF20H60DF
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current Ic

40A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

167W

Package Type

TO-220

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Maximum Operating Temperature

175°C

Series

Trench Gate Field Stop

Height

16.4mm

Width

4.6 mm

Standards/Approvals

No

Length

10.4mm

Automotive Standard

No

IGBT Discretes, STMicroelectronics


IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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