Infineon IKP30N65H5XKSA1 IGBT, 55 A 650 V, 3-Pin 188, Through Hole
- RS Stock No.:
- 273-7454
- Mfr. Part No.:
- IKP30N65H5XKSA1
- Manufacturer:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (50 units, in tubes of 50)*
SGD151.50
(exc. GST)
SGD165.00
(inc. GST)
FREE delivery for orders over $75.00, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 300 unit(s) shipping from 05 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | SGD3.03 | SGD151.50 |
| 100 - 150 | SGD2.929 | SGD146.45 |
| 200 + | SGD2.734 | SGD136.70 |
*price indicative
- RS Stock No.:
- 273-7454
- Mfr. Part No.:
- IKP30N65H5XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 55A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 188W | |
| Package Type | 188 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.1V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Series | High Speed Fifth Generation | |
| Height | 4.57mm | |
| Width | 10.38mm | |
| Length | 15.85mm | |
| Standards/Approvals | RoHS, JEDEC | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 55A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 188W | ||
Package Type 188 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.1V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Series High Speed Fifth Generation | ||
Height 4.57mm | ||
Width 10.38mm | ||
Length 15.85mm | ||
Standards/Approvals RoHS, JEDEC | ||
Automotive Standard No | ||
The Infineon IGBT is a high speed 5 IGBT in TRENCHSTOP 5 technology with RAPID 1 fast and soft antiparallel diode. This IGBT is qualified according to JEDEC for target applications. This IGBT is used for solar converters, uninterruptible power supplies, welding converters and mid to high range switching frequency converters application.
Halogen free
RoHS compliant
Low gate charge
Pb free lead plating
650V breakdown voltage
Related links
- Infineon IGBT 3-Pin 188, Through Hole
- Infineon IKW30N65H5XKSA1 55 A 650 V Through Hole
- Infineon 55 A 650 V Through Hole
- Starpower GD30PJX65L2S 55 A 650 V
- STMicroelectronics STP N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- STMicroelectronics STD N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252
- STMicroelectronics STP N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 STP60N043DM9
- STMicroelectronics STP N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 STP80N240K6