Infineon IGBT, 20 A 650 V, 3-Pin PG-TO-247, Through Hole
- RS Stock No.:
- 273-7441
- Mfr. Part No.:
- IHW20N65R5XKSA1
- Manufacturer:
- Infineon
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Subtotal (1 pack of 2 units)*
SGD5.81
(exc. GST)
SGD6.332
(inc. GST)
Add 58 units to get free delivery
In Stock
- Plus 140 unit(s) shipping from 16 February 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | SGD2.905 | SGD5.81 |
| 10 - 98 | SGD2.635 | SGD5.27 |
| 100 - 248 | SGD2.425 | SGD4.85 |
| 250 + | SGD2.23 | SGD4.46 |
*price indicative
- RS Stock No.:
- 273-7441
- Mfr. Part No.:
- IHW20N65R5XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 20A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 150W | |
| Package Type | PG-TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.35V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 21.1mm | |
| Height | 5.21mm | |
| Standards/Approvals | JESD-022, RoHS | |
| Width | 16.13 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 20A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 150W | ||
Package Type PG-TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.35V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Length 21.1mm | ||
Height 5.21mm | ||
Standards/Approvals JESD-022, RoHS | ||
Width 16.13 mm | ||
Automotive Standard No | ||
The Infineon IGBT is a reverse conducting IGBT with monolithic body diode. This IGBT has powerful monolithic reverse conducting diode with low forward voltage and qualified according to JESD022 for target applications. It has easy parallel switching capability due to positive temperature coefficient in VCEsat. This IGBT is recommended for induction cooking, inverter zed microwave ovens and resonant converters.
Low EMI
Halogen free
RoHS compliant
High ruggedness
Pb free lead plating
Stable temperature behaviour
Very low VCEsat and low Eoff
Very tight parameter distribution
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