Infineon IGBT Module, 650 A 150 V, 8-Pin Module, Panel
- RS Stock No.:
- 273-7365
- Mfr. Part No.:
- F3L150R07W2E3B11BOMA1
- Manufacturer:
- Infineon
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Subtotal (1 unit)*
SGD91.01
(exc. GST)
SGD99.20
(inc. GST)
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In Stock
- 15 unit(s) ready to ship from another location
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Units | Per unit |
|---|---|
| 1 - 4 | SGD91.01 |
| 5 - 9 | SGD88.27 |
| 10 - 99 | SGD84.73 |
| 100 - 249 | SGD80.49 |
| 250 + | SGD75.66 |
*price indicative
- RS Stock No.:
- 273-7365
- Mfr. Part No.:
- F3L150R07W2E3B11BOMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 650A | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 150V | |
| Maximum Power Dissipation Pd | 335W | |
| Package Type | Module | |
| Mount Type | Panel | |
| Pin Count | 8 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.9V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 56.7 mm | |
| Length | 62.4mm | |
| Height | 16.4mm | |
| Standards/Approvals | UL (E83335) | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 650A | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 150V | ||
Maximum Power Dissipation Pd 335W | ||
Package Type Module | ||
Mount Type Panel | ||
Pin Count 8 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.9V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Width 56.7 mm | ||
Length 62.4mm | ||
Height 16.4mm | ||
Standards/Approvals UL (E83335) | ||
Automotive Standard No | ||
The Infineon IGBT module has 650 V VCES, 150 A continuous DC collector current 3 level phase leg phase leg IGBT module with TRENCHSTOP IGBT3, Emitter Controlled 3 diode, NTC and Press FIT Contact Technology. This IGBT module increased blocking voltage capability to 650V and available with Al2O3 substrate with low thermal resistance.
Low VCEsat
Compact design
Rugged mounting
Low inductive design
Low Switching Losses
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