Infineon IGBT Module, 95 A 650 V ACEPACK 2, Clamp
- RS Stock No.:
- 259-1502
- Mfr. Part No.:
- FS75R07W2E3B11ABOMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 tray of 15 units)*
SGD1,288.305
(exc. GST)
SGD1,404.255
(inc. GST)
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Temporarily out of stock
- Shipping from 23 September 2026
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Units | Per unit | Per Tray* |
|---|---|---|
| 15 - 30 | SGD85.887 | SGD1,288.31 |
| 45 - 60 | SGD82.666 | SGD1,239.99 |
| 75 + | SGD77.499 | SGD1,162.49 |
*price indicative
- RS Stock No.:
- 259-1502
- Mfr. Part No.:
- FS75R07W2E3B11ABOMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 95A | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 275W | |
| Package Type | ACEPACK 2 | |
| Mount Type | Clamp | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.9V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Width | 42.5 mm | |
| Length | 56.7mm | |
| Height | 12mm | |
| Series | FP75 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 95A | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 275W | ||
Package Type ACEPACK 2 | ||
Mount Type Clamp | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.9V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Width 42.5 mm | ||
Length 56.7mm | ||
Height 12mm | ||
Series FP75 | ||
Automotive Standard No | ||
The Infineon easy pack 2B modules with trenchstop IGBT3, emitter controlled 3 diode and PressFIT / NTC.
Increased blocking voltage capability to 650V
Low switching Losses
Low VCEsat
Trench IGBT 3
Al2O3 substrate with low thermal resistance
High power density