Infineon IKB10N60TATMA1 IGBT, 24 A 600 V TO-263

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Subtotal (1 pack of 5 units)*

SGD13.92

(exc. GST)

SGD15.175

(inc. GST)

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  • 945 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
5 - 45SGD2.784SGD13.92
50 - 95SGD2.312SGD11.56
100 - 245SGD1.996SGD9.98
250 - 495SGD1.852SGD9.26
500 +SGD1.658SGD8.29

*price indicative

Packaging Options:
RS Stock No.:
258-7725
Mfr. Part No.:
IKB10N60TATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

IGBT

Maximum Continuous Collector Current Ic

24A

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

110W

Package Type

TO-263

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Collector Emitter Saturation Voltage VceSAT

1.5V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Standards/Approvals

JEDEC1

Series

TRENCHSTOPTM

Automotive Standard

No

The Infineon IGBT discrete with anti parallel diode in TO-263 package. It has significant improvement of static as well as dynamic performance of the device, due to combination of trench cell and field stop concept. It has low conduction and switching losses also.

Lowest VCEsat drop for lower conduction losses

Easy parallel switching capability due to positive temperature coefficient in VCEsat

Very soft, fast recovery antiparallel emitter controlled diode

High ruggedness, temperature stable behaviour

Low gate charg

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