Infineon IGW40N65H5FKSA1 IGBT, 40 A 650 V, 3-Pin PG-TO-247
- RS Stock No.:
- 258-0991
- Mfr. Part No.:
- IGW40N65H5FKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 unit)*
SGD6.37
(exc. GST)
SGD6.94
(inc. GST)
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In Stock
- Plus 646 unit(s) shipping from 16 March 2026
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Units | Per unit |
|---|---|
| 1 - 1 | SGD6.37 |
| 2 - 4 | SGD5.75 |
| 5 - 9 | SGD5.43 |
| 10 - 14 | SGD4.69 |
| 15 + | SGD4.46 |
*price indicative
- RS Stock No.:
- 258-0991
- Mfr. Part No.:
- IGW40N65H5FKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 40A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 250W | |
| Package Type | PG-TO-247 | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Maximum Gate Emitter Voltage VGEO | ±20 ±30 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC | |
| Series | Highspeed5IGBTinTRENCHSTOPTM5technology | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 40A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 250W | ||
Package Type PG-TO-247 | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Maximum Gate Emitter Voltage VGEO ±20 ±30 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC | ||
Series Highspeed5IGBTinTRENCHSTOPTM5technology | ||
Automotive Standard No | ||
The Infineon TRENCHSTOP 5 IGBT technology redefines best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow.
650V breakthrough voltage
Factor 2.5 lower Q g
Factor 2 reduction in switching losses
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