Infineon AIKQ200N75CP2XKSA1 IGBT, 200 A 750 V TO-247

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SGD17.27

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SGD18.82

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1 - 9SGD17.27
10 - 49SGD15.54
50 - 99SGD13.98
100 - 149SGD12.59
150 +SGD11.32

*price indicative

Packaging Options:
RS Stock No.:
248-6657
Mfr. Part No.:
AIKQ200N75CP2XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

IGBT

Maximum Continuous Collector Current Ic

200A

Maximum Collector Emitter Voltage Vceo

750V

Package Type

TO-247

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Collector Emitter Saturation Voltage VceSAT

1.3V

Maximum Operating Temperature

175°C

Height

5.1mm

Length

41.2mm

Width

15.9 mm

Standards/Approvals

AEC-Q101

Automotive Standard

AEC-Q101

The Infineon Automotive IGBT discrete is an EDT2 IGBT with a co-packed diode in the TO247PLUS package, the EDT2 technology has an extremely tight parameter distribution and a positive thermal coefficient, this enables easy paralleling operation, providing system flexibility and power scalability, and the 750 V EDT technology significantly improves energy efficiency and cooling efforts for high voltage automotive applications by enabling battery voltages up to 470V and safe fast switching due to increased overvoltage margins, thus enabling high performant inverter systems.

Self limiting current under short circuit condition

Positive thermal coefficient and very tight parameter distribution for easy paralleling

Excellent current sharing in parallel operation

Smooth switching characteristics, low EMI signature

Low gate charge

Simple gate drive design

High reliability

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