Infineon AIKQ120N75CP2XKSA1 IGBT, 120 A 750 V, 3-Pin TO-247
- RS Stock No.:
- 248-6655
- Mfr. Part No.:
- AIKQ120N75CP2XKSA1
- Manufacturer:
- Infineon
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SGD11.97
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SGD13.05
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Units | Per unit |
|---|---|
| 1 - 9 | SGD11.97 |
| 10 - 49 | SGD11.61 |
| 50 - 99 | SGD11.26 |
| 100 - 149 | SGD10.92 |
| 150 + | SGD10.59 |
*price indicative
- RS Stock No.:
- 248-6655
- Mfr. Part No.:
- AIKQ120N75CP2XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 120A | |
| Maximum Collector Emitter Voltage Vceo | 750V | |
| Maximum Power Dissipation Pd | 682W | |
| Package Type | TO-247 | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.3V | |
| Maximum Gate Emitter Voltage VGEO | 15 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.1mm | |
| Length | 41.2mm | |
| Width | 15.9 mm | |
| Series | EDT2 | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 120A | ||
Maximum Collector Emitter Voltage Vceo 750V | ||
Maximum Power Dissipation Pd 682W | ||
Package Type TO-247 | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.3V | ||
Maximum Gate Emitter Voltage VGEO 15 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Height 5.1mm | ||
Length 41.2mm | ||
Width 15.9 mm | ||
Series EDT2 | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon Automotive IGBT discrete is an EDT2 IGBT with a co-packed diode in the TO247PLUS package, the EDT2 technology has an extremely tight parameter distribution and a positive thermal coefficient, this enables easy paralleling operation, providing system flexibility and power scalability, and the 750 V EDT technology significantly improves energy efficiency and cooling efforts for high voltage automotive applications by enabling battery voltages up to 470V and safe fast switching due to increased overvoltage margins, thus enabling high performant inverter systems.
Self limiting current under short circuit condition
Positive thermal coefficient and very tight parameter distribution for easy paralleling
Excellent current sharing in parallel operation
Smooth switching characteristics, low EMI signature
Low gate charge
Simple gate drive design
High reliability
Related links
- Infineon IGBT 3-Pin TO-247
- Infineon IKQB120N75CP2AKSA1 120 A 750 V Through Hole
- Infineon IKQB160N75CP2AKSA1 200 A 750 V Through Hole
- Infineon IKQB200N75CP2AKSA1 Single Collector Single Gate IGBT 3-Pin PG-TO247-3-PLUS-N,
- Starpower DG200A08TCSS IGBT Discrete 3-Pin TO-247PLUS-3L
- STMicroelectronics STGW80V60DF 120 A 600 V Through Hole
- onsemi AFGY120T65SPD 120 A 650 V Through Hole
- STMicroelectronics 120 A 600 V Through Hole
