Infineon IGBT Module 650 V, Through Hole
- RS Stock No.:
- 248-1197
- Mfr. Part No.:
- DF300R07W2H3B77BPSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 tray of 15 units)*
SGD1,375.005
(exc. GST)
SGD1,498.755
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 03 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tray* |
|---|---|---|
| 15 - 15 | SGD91.667 | SGD1,375.01 |
| 30 - 30 | SGD87.084 | SGD1,306.26 |
| 45 + | SGD82.729 | SGD1,240.94 |
*price indicative
- RS Stock No.:
- 248-1197
- Mfr. Part No.:
- DF300R07W2H3B77BPSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Number of Transistors | 4 | |
| Maximum Power Dissipation Pd | 20mW | |
| Mount Type | Through Hole | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 12mm | |
| Standards/Approvals | RoHS | |
| Series | DF300R07W2H3_B77 | |
| Width | 42.5 mm | |
| Length | 56.7mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Number of Transistors 4 | ||
Maximum Power Dissipation Pd 20mW | ||
Mount Type Through Hole | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Maximum Operating Temperature 150°C | ||
Height 12mm | ||
Standards/Approvals RoHS | ||
Series DF300R07W2H3_B77 | ||
Width 42.5 mm | ||
Length 56.7mm | ||
Automotive Standard No | ||
The Infineon makes this EasyPACK 2B 650 V, 100 A 3-level IGBT module with Trench/Fieldstop IGBT H3 and rapid diode and PressFIT / NTC. This device offers easy of use compact design, optimized performance. The device provides added benefits like increased blocking voltage capability up to 650 V, low inductive design, low switching losses and low VCE,sat. It uses an Al2O3 substrate with low thermal resistance and PressFIT contact technology. This device offers rugged mounting due to integrated mounting clamp. This device has Booster configuration and uses IGBT HighSpeed 3 technology.
Best cost-performance ratio with reduced system costs
High degree of freedom in design
Highest efficiency and power density
Related links
- Infineon IGBT Module 650 V, Through Hole
- Infineon DF300R07W2H3B77BPSA1 IGBT Module 650 V, Through Hole
- Infineon F3L150R07W2H3B11BPSA1 IGBT Module 650 V, Through Hole
- Infineon F3L100R07W2H3B11BPSA1 IGBT Module 650 V, Through Hole
- Infineon DF200R07W2H3B77BPSA1 IGBT Module 650 V, Through Hole
- Infineon IGBT Module Panel
- Infineon IGBT Module 8-Pin Module, Panel
- Infineon F3L400R07W3S5B59BPSA1 Triple Parallel IGBT Module 650 V AG-EASY3B