Infineon FS100R12KE3BOSA1 IGBT Module, 140 A 1200 V

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Subtotal (1 unit)*

SGD166.29

(exc. GST)

SGD181.26

(inc. GST)

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1 - 1SGD166.29
2 - 2SGD162.96
3 - 3SGD159.70
4 - 4SGD156.50
5 +SGD153.37

*price indicative

Packaging Options:
RS Stock No.:
244-5861
Mfr. Part No.:
FS100R12KE3BOSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

IGBT Module

Maximum Continuous Collector Current Ic

140A

Maximum Collector Emitter Voltage Vceo

1200V

Number of Transistors

6

Maximum Power Dissipation Pd

480W

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

2.15V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Series

FS

Automotive Standard

No

The infineon IGBT module the maximum rated collector emitter voltage is 1200 V and toatal power dissipation is 480 W, maximum gate threshold voltage is 6.5 V.

Internal isolation basic insulation (class 1, IEC 61140)

Gate-emitter peak voltage + /- 20 V

Maximum collector-emitter saturation voltage 2.15 V

Gate-emitter leakage current 400 nA

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