MPN

Infineon FP50R12KE3BOSA1 IGBT Module, 75 A 1200 V

RS Stock No.:: 244-5834
Mfr. Part No.:: FP50R12KE3BOSA1
Manufacturer:: Infineon

Infineon FP50R12KE3BOSA1 IGBT Module, 75 A 1200 V

Bulk discount available

Subtotal (1 tray of 10 units)*

SGD1,562.16

(exc. GST)

SGD1,702.75

(inc. GST)

FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28

Temporarily out of stock

Shipping from 14 April 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Tray*
10 - 10	SGD156.216	SGD1,562.16
20 - 20	SGD153.092	SGD1,530.92
30 +	SGD150.03	SGD1,500.30

*price indicative

RS Stock No.:: 244-5834
Mfr. Part No.:: FP50R12KE3BOSA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Maximum Continuous Collector Current	75 A
	Maximum Collector Emitter Voltage	1200 V
	Maximum Gate Emitter Voltage	±20V
	Number of Transistors	7
	Maximum Power Dissipation	280 W

	Select all
	Brand Infineon
	Maximum Continuous Collector Current 75 A
	Maximum Collector Emitter Voltage 1200 V
	Maximum Gate Emitter Voltage ±20V
	Number of Transistors 7
	Maximum Power Dissipation 280 W

Datasheet - FP50R12KE3BOSA1

The infineon IGBT module the maximum rated collector emitter voltage is 1200 V and toatal power dissipation is 280 W, maximum gate threshold voltage is 6.5 V.

Internal isolation basic insulation (class 1, IEC 61140)
Gate-emitter peak voltage + /- 20 V
Collector-emitter saturation voltage 2.30 V
Gate-emitter leakage current 400 nA

Infineon FP50R12KE3BOSA1 IGBT Module, 75 A 1200 V

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