Infineon IGP20N65H5XKSA1 IGBT, 20 A 650 V TO-220

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Subtotal (1 pack of 2 units)*

SGD4.43

(exc. GST)

SGD4.828

(inc. GST)

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  • Plus 264 unit(s) shipping from 03 June 2026
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Units
Per unit
Per Pack*
2 - 8SGD2.215SGD4.43
10 - 98SGD2.105SGD4.21
100 - 248SGD2.00SGD4.00
250 - 498SGD1.90SGD3.80
500 +SGD1.805SGD3.61

*price indicative

Packaging Options:
RS Stock No.:
242-0978
Mfr. Part No.:
IGP20N65H5XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

IGBT

Maximum Continuous Collector Current Ic

20A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

125W

Package Type

TO-220

Maximum Gate Emitter Voltage VGEO

±20 ±30 V

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

1.65V

Maximum Operating Temperature

175°C

Series

High Speed Fifth Generation

Width

10.36 mm

Length

29.95mm

Height

4.57mm

Standards/Approvals

JEDEC

Automotive Standard

No

The Infineon IGBT trasistor has a 650 V breakthrough voltage.The maximum junction temperature of transistor is 175°C.

Best-in-Class efficiency in hard switching and resonant topologies

Plug and play replacement of previous generation IGBTs

Applicable in Solar converters , Uninterruptible power supplies, Welding converters

Mid to high range switching frequency converters

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