Infineon IGP20N65H5XKSA1 Single IGBT, 42 A 650 V TO-220-3

Bulk discount available

Subtotal (1 pack of 2 units)*

SGD4.43

(exc. GST)

SGD4.828

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • 280 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
2 - 8SGD2.215SGD4.43
10 - 98SGD2.105SGD4.21
100 - 248SGD2.00SGD4.00
250 - 498SGD1.90SGD3.80
500 +SGD1.805SGD3.61

*price indicative

Packaging Options:
RS Stock No.:
242-0978
Mfr. Part No.:
IGP20N65H5XKSA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Maximum Continuous Collector Current

42 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

20V

Maximum Power Dissipation

125 W

Number of Transistors

1

Configuration

Single

Package Type

TO-220-3

The Infineon IGBT trasistor has a 650 V breakthrough voltage.The maximum junction temperature of transistor is 175°C.

Best-in-Class efficiency in hard switching and resonant topologies
Plug and play replacement of previous generation IGBTs
Applicable in Solar converters , Uninterruptible power supplies, Welding converters
Mid to high range switching frequency converters

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


Related links