MPN

Infineon IGP20N65H5XKSA1 IGBT, 20 A 650 V TO-220

Name: Infineon IGP20N65H5XKSA1 IGBT, 20 A 650 V TO-220
Brand: Infineon
SKU: 242-0978
Price: 2.41 SGD
Availability: InStock

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Subtotal (1 pack of 2 units)*

SGD4.43

(exc. GST)

SGD4.828

(inc. GST)

In Stock

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*price indicative

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	IGBT
	Maximum Continuous Collector Current Ic	20A
	Maximum Collector Emitter Voltage Vceo	650V
	Maximum Power Dissipation Pd	125W
	Package Type	TO-220
	Maximum Gate Emitter Voltage VGEO	±20 ±30 V
	Maximum Collector Emitter Saturation Voltage VceSAT	1.65V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	175°C
	Width	10.36 mm
	Series	High Speed Fifth Generation
	Length	29.95mm
	Standards/Approvals	JEDEC
	Height	4.57mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type IGBT
	Maximum Continuous Collector Current Ic 20A
	Maximum Collector Emitter Voltage Vceo 650V
	Maximum Power Dissipation Pd 125W
	Package Type TO-220
	Maximum Gate Emitter Voltage VGEO ±20 ±30 V
	Maximum Collector Emitter Saturation Voltage VceSAT 1.65V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 175°C
	Width 10.36 mm
	Series High Speed Fifth Generation
	Length 29.95mm
	Standards/Approvals JEDEC
	Height 4.57mm
	Automotive Standard No

The Infineon IGBT trasistor has a 650 V breakthrough voltage.The maximum junction temperature of transistor is 175°C.

Best-in-Class efficiency in hard switching and resonant topologies

Plug and play replacement of previous generation IGBTs

Applicable in Solar converters , Uninterruptible power supplies, Welding converters

Mid to high range switching frequency converters

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