Infineon FZ825R33HE4DBPSA1 Single IGBT Module, 825 A 3300 V AG-IHVB130

This image is representative of the product range

View all IGBTs
Bulk discount available

Subtotal (1 unit)*

SGD1,811.02

(exc. GST)

SGD1,974.01

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • 5 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 1SGD1,811.02
2 +SGD1,774.81

*price indicative

Packaging Options:
RS Stock No.:
236-5199
Mfr. Part No.:
FZ825R33HE4DBPSA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Maximum Continuous Collector Current Ic

825A

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

3300V

Maximum Power Dissipation Pd

2400kW

Number of Transistors

2

Configuration

Single

Package Type

AG-IHVB130

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.65V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Height

16.4mm

Length

109.9mm

Width

62 mm

Standards/Approvals

60749, 60068, IEC 60747

Automotive Standard

No

The Infineon single switch IGBT Module is with TRENCHSTOP™ IGBT4 and Emitter Controlled 4 diode. This module has high power density and AlSiC base plate for increased thermal cycling capability.

VCES is 3300 V

IC nom is 825 A

ICRM is 1650 A

It retains high current density

Related links