ROHM RGTV80TK65DGVC11, Type N-Channel IGBT, 23 A 650 V, 3-Pin TO-3PFM, Through Hole
- RS Stock No.:
- 235-2734
- Mfr. Part No.:
- RGTV80TK65DGVC11
- Manufacturer:
- ROHM
This image is representative of the product range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 235-2734
- Mfr. Part No.:
- RGTV80TK65DGVC11
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Maximum Continuous Collector Current Ic | 23A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 85W | |
| Package Type | TO-3PFM | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.9V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Maximum Continuous Collector Current Ic 23A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 85W | ||
Package Type TO-3PFM | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.9V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ROHM RGTV series field stop trench IGBT with 2 μs short-circuit tolerance and has built in very fast & soft recovery FRD. It is suitable for PFC, solar inverter, UPS, welding and in IH applications. It has collector current of 23 A.
Low collector-emitter saturation voltage
High speed switching & low switching loss
Pb-free lead plating
RoHS compliant
Related links
- ROHM RGTV80TK65DGVC11 23 A 650 V Through Hole
- ROHM RGTV80TK65GVC11 23 A 650 V Through Hole
- Infineon C7 GOLD Type N-Channel MOSFET 650 V Enhancement, 8-Pin HSOF IPT60R150G7XTMA1
- Infineon C7 GOLD Type N-Channel MOSFET 650 V Enhancement, 8-Pin HSOF
- Vishay EF Type N-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH125N60EF-T1GE3
- Vishay EF Type N-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK 8 x 8
- ROHM RGW60TS65EHRC11 30 A 650 V Through Hole
- ROHM RGW60TS65HRC11 30 A 650 V Through Hole