Infineon IKWH30N65WR6XKSA1, Type N-Channel IGBT, 30 A 650 V, 3-Pin TO-247, Through Hole

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Subtotal (1 pack of 2 units)*

SGD7.60

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SGD8.28

(inc. GST)

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Units
Per unit
Per Pack*
2 - 8SGD3.80SGD7.60
10 - 18SGD3.61SGD7.22
20 - 28SGD3.43SGD6.86
30 +SGD3.25SGD6.50

*price indicative

Packaging Options:
RS Stock No.:
232-6738
Mfr. Part No.:
IKWH30N65WR6XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

IGBT

Maximum Continuous Collector Current Ic

30A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

165W

Number of Transistors

1

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Collector Emitter Saturation Voltage VceSAT

1.75V

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

21.1mm

Height

5.21mm

Series

IKWH30N65WR6

Standards/Approvals

JEDEC47/20/22

Width

16.13 mm

Automotive Standard

No

The Infineon's 30 A reverse conducting TRENCHSTOP 5 WR6 IGBT comes in high creep age and clearance TO-247-3-HCC package. It is specifically optimized for PFC for RAC / CAC and Welding inverter application. Excellent price/performance ratio of WR6 IGBT allows access to the high performance technology also for cost sensitive customers. WR6 is offering lowest VCEsat, and Esw which allows the switching frequency up to 75 kHz. WR6 IGBT also enable more reliable design with the increased clearances and creep age distances.

Monolithically integrated diode

Lowest switching losses

Improved reliability against package contamination

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