STMicroelectronics STGWA30HP65FB, Type N-Channel IGBT, 30 A 650 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 202-5515
- Mfr. Part No.:
- STGWA30HP65FB
- Manufacturer:
- STMicroelectronics
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Bulk discount available
Subtotal (1 pack of 5 units)*
SGD25.60
(exc. GST)
SGD27.90
(inc. GST)
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | SGD5.12 | SGD25.60 |
| 10 + | SGD4.864 | SGD24.32 |
*price indicative
- RS Stock No.:
- 202-5515
- Mfr. Part No.:
- STGWA30HP65FB
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Maximum Continuous Collector Current Ic | 30A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 260W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 21.1 mm | |
| Height | 5.1mm | |
| Series | STG | |
| Length | 15.9mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Collector Current Ic 30A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 260W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 21.1 mm | ||
Height 5.1mm | ||
Series STG | ||
Length 15.9mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The STMicroelectronics high speed HB series IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.
Low thermal resistance
Very fast soft recovery antiparallel diode
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