Infineon IHW30N160R5XKSA1, Type N-Channel IGBT, 30 A 1600 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 218-4399
- Distrelec Article No.:
- 304-31-963
- Mfr. Part No.:
- IHW30N160R5XKSA1
- Manufacturer:
- Infineon
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SGD30.07
(exc. GST)
SGD32.775
(inc. GST)
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In Stock
- 90 unit(s) ready to ship from another location
- Plus 2,705 unit(s) shipping from 08 June 2026
- Plus 240 unit(s) shipping from 23 July 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | SGD6.014 | SGD30.07 |
| 10 - 95 | SGD5.886 | SGD29.43 |
| 100 - 245 | SGD5.712 | SGD28.56 |
| 250 - 495 | SGD5.542 | SGD27.71 |
| 500 + | SGD5.378 | SGD26.89 |
*price indicative
- RS Stock No.:
- 218-4399
- Distrelec Article No.:
- 304-31-963
- Mfr. Part No.:
- IHW30N160R5XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 30A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1600V | |
| Maximum Power Dissipation Pd | 263W | |
| Number of Transistors | 1 | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.85V | |
| Maximum Gate Emitter Voltage VGEO | ±20 ±25 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC47/20/22 | |
| Series | IHW30N160R5 | |
| Height | 5.3mm | |
| Length | 21.5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 30A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1600V | ||
Maximum Power Dissipation Pd 263W | ||
Number of Transistors 1 | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.85V | ||
Maximum Gate Emitter Voltage VGEO ±20 ±25 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC47/20/22 | ||
Series IHW30N160R5 | ||
Height 5.3mm | ||
Length 21.5mm | ||
Automotive Standard No | ||
Infineon IGBT, 30A Maximum Continuous Collector Current, 1600V Maximum Collector Emitter Voltage - IHW30N160R5XKSA1
This IGBT is a robust semiconductor device designed for high voltage applications, featuring a maximum collector current of 30A and operating within a temperature range of -40°C to +175°C. The TO-247 package ensures convenient installation, while its dimensions of 16.3 x 21.5 x 5.3 mm provide a compact solution for various electronic needs.
Features & Benefits
• Reverse-conducting capability for enhanced performance
• Monolithic body diode reduces forward voltage loss
• Tight parameter distribution enhances reliability
• High ruggedness improves durability in demanding conditions
• Low EMI emissions ensure minimal interference in circuits
Applications
• Used for induction cooking
• Suitable for microwave oven circuitry
• Ideal for various high voltage switching
• Compatible with specialised semiconductor power modules
What are the key thermal characteristics of this device?
The thermal resistance from junction to ambient is 40 K/W, and the junction to case thermal resistance is 0.57 K/W, ensuring efficient heat management under load conditions.
How does this IGBT module handle high voltage applications?
It boasts a collector-emitter voltage rating of up to 1600V, making it suitable for high voltage environments while maintaining safe operation across specified limits.
What implications does the maximum power dissipation have for design?
With a maximum power dissipation of 263W, it allows for efficient energy management, ensuring that the device can operate effectively without thermal overload in typical applications.
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