Infineon IGW75N65H5XKSA1, Type N-Channel IGBT, 75 A 650 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 218-4392
- Mfr. Part No.:
- IGW75N65H5XKSA1
- Manufacturer:
- Infineon
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View bulk pricing optionSubtotal (1 pack of 5 units)*
SGD31.97
(exc. GST)
SGD34.845
(inc. GST)
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Temporarily out of stock
- 240 unit(s) shipping from 03 December 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | SGD6.394 | SGD31.97 |
| 10 - 95 | SGD5.856 | SGD29.28 |
| 100 - 245 | SGD5.406 | SGD27.03 |
| 250 - 495 | SGD5.022 | SGD25.11 |
| 500 + | SGD4.882 | SGD24.41 |
*price indicative
- RS Stock No.:
- 218-4392
- Mfr. Part No.:
- IGW75N65H5XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 75A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 198W | |
| Number of Transistors | 1 | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Series | IGW75N65H5 | |
| Standards/Approvals | JEDEC, RoHS | |
| Length | 21.1mm | |
| Height | 5.21mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 75A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 198W | ||
Number of Transistors 1 | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Series IGW75N65H5 | ||
Standards/Approvals JEDEC, RoHS | ||
Length 21.1mm | ||
Height 5.21mm | ||
Automotive Standard No | ||
The Infineon TRENCHSTOP IGBT5 technology redefines best-in-class IGBT resulting in lower junction and case temperature leading to higher device reliability by providing unmatched performance in terms of efficiency for hard switching applications. It has collector emitter voltage of 650 V and collector current of 120 A.
Higher power density design
50V increase in the bus voltage possible without compromising reliability
Mild positive temperature coefficient
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