Infineon IKW30N65H5XKSA1, Type N-Channel IGBT, 55 A 650 V, 3-Pin TO-247, Through Hole

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SGD28.43

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SGD30.99

(inc. GST)

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Units
Per unit
Per Pack*
5 - 5SGD5.686SGD28.43
10 - 95SGD5.21SGD26.05
100 - 245SGD4.808SGD24.04
250 - 495SGD4.464SGD22.32
500 +SGD4.346SGD21.73

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Packaging Options:
RS Stock No.:
215-6673
Distrelec Article No.:
304-31-965
Mfr. Part No.:
IKW30N65H5XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

IGBT

Maximum Continuous Collector Current Ic

55A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

188W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

1.65V

Maximum Gate Emitter Voltage VGEO

±30 V

Maximum Operating Temperature

175°C

Series

High Speed Fifth Generation

Width

16.13 mm

Height

5.21mm

Standards/Approvals

JEDEC

Length

42mm

Automotive Standard

No

The Infineon 650v duopack insulated-gate bipolar transistor is a diode of fifth generation high speed switching series.

High Efficiency

Low Switching Losses

Increased Reliability

Low Electromagnetic Interference

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