Infineon IKQ100N60TXKSA1, Type N-Channel IGBT, 160 A 600 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 215-6665
- Mfr. Part No.:
- IKQ100N60TXKSA1
- Manufacturer:
- Infineon
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Subtotal (1 unit)*
SGD14.86
(exc. GST)
SGD16.20
(inc. GST)
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In Stock
- 76 unit(s) ready to ship from another location
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Units | Per unit |
|---|---|
| 1 - 9 | SGD14.86 |
| 10 - 99 | SGD13.62 |
| 100 - 249 | SGD12.58 |
| 250 - 499 | SGD11.69 |
| 500 + | SGD11.37 |
*price indicative
- RS Stock No.:
- 215-6665
- Mfr. Part No.:
- IKQ100N60TXKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 160A | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 714W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.5V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 41.2mm | |
| Series | TrenchStop | |
| Standards/Approvals | No | |
| Height | 5.1mm | |
| Width | 15.9 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 160A | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 714W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.5V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Length 41.2mm | ||
Series TrenchStop | ||
Standards/Approvals No | ||
Height 5.1mm | ||
Width 15.9 mm | ||
Automotive Standard No | ||
The Infineon insulated-gate bipolar transistor with positive temperature coefficient in saturation voltage has fast recovery anti-parallel emitter controlled diode.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Related links
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