IXYS, Type N-Channel IGBT Module, 360 A 1200 V, 11-Pin SimBus F, PCB

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Subtotal (1 box of 3 units)*

SGD595.131

(exc. GST)

SGD648.693

(inc. GST)

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Per unit
Per Box*
3 +SGD198.377SGD595.13

*price indicative

RS Stock No.:
168-4565
Mfr. Part No.:
MIXA225PF1200TSF
Manufacturer:
IXYS
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Brand

IXYS

Maximum Continuous Collector Current Ic

360A

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1200V

Number of Transistors

2

Maximum Power Dissipation Pd

1100W

Package Type

SimBus F

Mount Type

PCB

Channel Type

Type N

Pin Count

11

Maximum Gate Emitter Voltage VGEO

±30 V

Maximum Collector Emitter Saturation Voltage VceSAT

1.8V

Minimum Operating Temperature

150°C

Maximum Operating Temperature

-40°C

Width

62 mm

Standards/Approvals

No

Series

MIXA225PF1200TSF

Height

17mm

Length

152mm

Automotive Standard

No

COO (Country of Origin):
DE

IGBT Modules, IXYS


IGBT Discretes & Modules, IXYS


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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